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Si Wafer

6" (150mm) Silicon Wafer Specifcations

SOI Wafer

Sapphire Wafer

III-V Wafer

Material Properties

GeSn  thin film Wafer

Parameter

Characteristic

Type/Dopant

P, Boron N, Phosphorous N, Antimony N, Arsenic

Glass Substrate

Orientations

<100>, <111> slice off orientations per customer’s specifications

Macroporous

Oxygen Content

10-19 ppmA Custom tolerances per customer’s specification

Other Substrate

Carbon Content

< 0.6 ppmA

Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic

0.001 – 50 ohm cm 0.1 – 40 ohm cm 0.005 – 0.025 ohm cm < 0.005 ohm cm

Mechanical Properties

Parameter

Prime

Monitor / Test A

Test

Diameter

150 ± 0.2 mm

150 ± 0.2 mm

150 ± 0.5 mm

Thickness

675 ± 20 µm (standard)

675 ± 25 µm (standard) 450 ± 25 µm 625 ± 25 µm 1000 ± 25 µm 1300 ± 25 µm 1500 ± 25 µm

675 ± 50 µm (standard)

TTV

< 5 µm

< 10 µm

< 15 µm

Bow

< 30 µm

< 30 µm

< 50 µm

Wrap

< 30 µm

< 30 µm

< 50 µm

Edge Rounding

SEMI-STD

Marking

Primary SEMI-Flat only, SEMI-STD Flats Jeida Flat, Notch

Surface Quality

Parameter

Prime

Monitor / Test A

Test

Front Side Criteria

Surface condition

Chemical Mechanical Polished

Chemical Mechanical Polished

Chemical Mechanical Polished

Surface Roughness

< 2Å

< 2Å

< 2Å

Contamination,Particles @ >0.3 µm

 = 20

 = 20

 = 20

Haze, Pits, Orange peel

None

None

None

Saw Marks, striations

None

None

None

Back Side Criteria

None

None

None

Caustic etched

Cracks, crowsfeet, saw marks,stains

Surface condition

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