GeSn thin film/Si(Ge) wafer

All group IV semiconductor GeSn alloy is an exciting new semiconductor material which offers bandgap manipulation promising the first direct bandgap group IV semiconductor. The alloy exhibits a larger carrier mobility and optical absorption coefficient compared to Si or Ge . The advance in the growth techniques, in particular in the molecular beam epitaxy system, has produced a quality GeSn film with very low defect level that is comparable to those strained SiGe thin films (deposited on Si wafer). We offer quality epilayer GeSn film with defect density among the lowest reported in the literatures. Specific heterostructures such as P-i-N diode can also provided on request.